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hexfet power mosfet notes through are on page 9 features and benefits applications ? or-ing mosfet for 12v (typical) bus in-rush current ? battery operated dc motor inverter mosfet features benefits pqfn 5x6 mm

low rdson (<1.05 m 0. 0. ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability form quantity IRFH8202PBF pqfn 5mm x 6mm tape and reel 4000 irfh8202trpbf base part number package type standard pack orderable part number absolute maximum ratings parameter units v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range max. 47 100 400 20 30 100 v w a c -55 to + 150 3.6 0.029 160 v ds 25 v r ds(on) max (@v gs = 10v) 1.05 m q g (typical) 52 nc r g (typical) 1.3 i d (@t c(bottom) = 25c) 100 a

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! "# s d g thermal resistance parameter typ. max. units r 0.5 0.8 r ??? 15 c/w r ??? 35 r 10 ??? 21 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 25 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c r ds(on) static drain-to-source on-resistance ??? 0.90 1.05 ??? 1.40 1.85 v gs(th) gate threshold voltage 1.35 1.80 2.35 v v ds = v gs , i d = 150 a . .0 10 100 100 11 110 1 1 . 1 1 1. . t d(on) turn-on delay time ??? 28 ??? t r rise time ??? 46 ??? t d(off) turn-off delay time ??? 30 ??? t f fall time ??? 19 ??? c is s input capacitance ??? 7174 ??? c os s output capacitance ??? 1758 ??? c rss reverse transfer capacitance ??? 828 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 37 56 ns q rr reverse recovery charge ??? 68 102 nc ??? v ds = 16v, v gs = 0v mosfet symbol na v gs = 10v, v ds = 13v, i d = 50a v gs = 20v v gs = -20v 100 i d = 50a v gs = 4.5v ns a pf nc ??? ??? 400 ??? ??? conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 50a v ds = 20v, v gs = 0v v gs = 4.5v, i d = 50a v ds = 13v conditions max. 468 50 ? = 1.0mhz v gs = 0v v ds = 13v t j = 25c, i f = 50a, v dd = 13v di/dt = 200a/ s t j = 25c, i s = 50a, v gs = 0v showing the integral reverse p-n junction diode. typ. ??? r g =1.8 1 0 0 0 1 a i d = 50a v dd = 13v, v gs = 4.5v

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! "# fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60 s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 1 1.5 2 2.5 3 3.5 4 4.5 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 140 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 20v v ds = 13v i d = 50a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 60 s pulse width tj = 25c 2.7v

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! "# fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a id = 1.0ma id = 500 a id = 150 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100 sec dc limited by package 25 50 75 100 125 150 t c , case temperature (c) 0 50 100 150 200 250 300 350 i d , d r a i n c u r r e n t ( a ) limited by package

! "# fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 1 2 3 4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 50a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 18a 24a bottom 50a fig 14. typical avalanch current vs. pulsewidth 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 125c and tstart =25c (single pulse)

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for n-channel hexfet power mosfets fig 18a. gate charge test circuit fig 18b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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%% ? "#""&# 1k vcc dut 0 l s fig 16b. unclamped inductive waveforms fig 16a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 17a. switching time test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f '( 1 ) $
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! "# pqfn 5x6 outline "b" package details note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-113 6: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf pqfn 5x6 outline "g" package details

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! "# pqfn 5x6 tape and reel bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimens ion des ign to accommodate the component width dimens ion des ign to accommodate the component lenght di mens i on des i gn to accommodate the component thi cknes s p i tch between s ucces s i ve cavi ty center s over al l wi dth of the car r i er tape des cript ion type package 5 x 6 pqf n note: all dimension are nominal diameter r eel qt y width reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadr ant pin 1 (i nch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code)

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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.37mh, r g = 25 , i as = 50a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. http://www.irf.com/technical-info/appnotes/an-994.pdf calculated continuous current based on maximum allowable junction temperature. package is limited to 100a by production test capability qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability applicable version of jedec standard at the time of product release. ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial (per je de c je s d47f guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments 8/1/2013 ? added "strong ir fet?" above part number on page 1 ? updated package outline for ?option b? and added package outline for ?option g? on page 7 ? . ? . ? 1 . revision history 4/28/2015 5/19/2015

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